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LTC5531 1 5531f applicatio s u features typical applicatio u descriptio u n 802.11a, 802.11b, 802.11g, 802.15, 802.16 n multimode mobile phone products n optical data links n wireless data modems n wireless and cable infrastructure n rf power alarm n envelope detector n temperature compensated internal schottky diode rf detector n wide input frequency range: 300mhz to 7ghz* n wide input power range: C32dbm to 10dbm n buffered detector output n precision v out offset control n wide v cc range of 2.7v to 6v n low operating current: 500 m a n low shutdown current: <2 m a n available in a low profile (1mm) sot-23 package precision 300mhz to 7ghz rf detector with shutdown and offset adjustment the ltc ? 5531 is an rf power detector for rf applications operating in the 300mhz to 7ghz range. a temperature compensated schottky diode peak detector and buffer amplifier are combined in a small thinsot tm package. the supply voltage range is optimized for operation from a single lithium-ion cell or 3xnimh. the rf input voltage is peak detected using an on-chip schottky diode. the detected voltage is buffered and supplied to the v out pin. a power saving shutdown mode reduces current to less than 2 m a. the initial offset voltage of 120mv 35mv can be precisely adjusted using the v os pin. the LTC5531 operates with input power levels from C32dbm to 10dbm. , ltc and lt are registered trademarks of linear technology corporation. 300mhz to 7ghz rf power detector LTC5531 1 2 3 6 5 4 100pf 0.1 f v cc v os reference v cc v out rf in gnd shdn 33pf 5531 ta01 rf input v os disable enable v out output voltage vs rf input power v out output voltage (mv) 3600 3200 2800 2400 2000 1600 1200 800 400 0 rf input power (dbm) 5531 ta02 C30 C26 C22 C18 C14 C10 C6 C2 2 6 10 v os = 0v v cc = 3.6v t a = 25 c 7000mhz 300mhz 6000mhz 5000mhz 1000mhz 2000mhz 3000mhz 4000mhz thinsot is a trademark of linear technology corporation. * higher frequency operation is achievable with reduced performance. consult factory for more information.
LTC5531 2 5531f v cc , v out , shdn, v os .................................... C0.3v to 6.5v rf in voltage ...................................... (v cc 1.5v) to 7v rf in power (rms) .............................................. 12dbm i vout ...................................................................... 5ma operating temperature range (note 2) .. C 40 c to 85 c maximum junction temperature ......................... 125 c storage temperature range ................ C 65 c to 150 c lead temperature (soldering, 10 sec).................. 300 c absolute axi u rati gs w ww u package/order i for atio uu w (note 1) electrical characteristics the l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at t a = 25 c. v cc = 3.6v, shdn = v cc = hi, shdn = 0v = lo, rf input signal is off, v os = 0v and shdn = hi unless otherwise noted. parameter conditions min typ max units v cc operating voltage l 2.7 6 v i vcc operating current i vout = 0ma l 0.5 0.7 ma i vcc shutdown current shdn = lo l 0.01 2 m a v out (no rf input) r load = 2k, v os = 0v l 85 100 to 140 155 mv shdn = lo 1 mv v out output current v out = 1.75v, v cc = 2.7v, d v out < 10mv l 24 ma v out enable time shdn = lo to hi, c load = 33pf, r load = 2k l 820 m s v out bandwidth c load = 33pf, r load = 2k (note 4) 2 mhz v out load capacitance (notes 6, 7) l 33 pf v out slew rate v rfin = 1v step, c load = 33pf, r load = 2k (note 3) 3 v/ m s v out noise v cc = 3v, noise bw = 1.5mhz, 50 w rf input termination 1 mv p-p v os voltage range l 01v v os input current l C0.5 0.5 m a shdn voltage, chip disabled v cc = 2.7v to 6v l 0.35 v shdn voltage, chip enabled v cc = 2.7v to 6v l 1.4 v shdn input current shdn = 3.6v l 22 36 m a rf in input frequency range (note 8) 300 to 7000 mhz rf in input power range rf frequency = 300mhz to 7ghz (note 5, 6) v cc = 2.7v to 6v C32 to 10 dbm rf in ac input resistance f = 1000mhz, pin = C25dbm 220 w rf in input shunt capacitance f = 1000mhz, pin = C25dbm 0.65 pf consult ltc marketing for parts specified with wider operating temperature ranges. order part number s6 part marking t jmax = 125 c, q ja = 250 c/w ltbbq LTC5531es6 rf in 1 gnd 2 shdn 3 6 v cc 5 v out 4 v os top view s6 package 6-lead plastic tsot-23 note 1: absolute maximum ratings are those values beyond which the life of a device may be impaired. note 2: specifications over the C40 c to 85 c operating temperature range are assured by design, characterization and correlation with statistical process controls. note 3: the rise time at v out is measured between 1.3v and 2.3v. note 4: bandwidth is calculated based on the 10% to 90% rise time equation: bw = 0.35/rise time. note 5: rf performance is tested at 1800mhz note 6: guaranteed by design. note 7: capacitive loading greater than this value may result in circuit instability. note 8: higher frequency operation is achievable with reduced performance. consult factory for more information.
LTC5531 3 5531f typical perfor a ce characteristics uw v out vs rf input power and v os , f rf = 300mhz v out vs rf input power and v os , f rf = 1000mhz v out vs rf input power and v cc supply voltage, f rf = 1000mhz typical detector characteristics, 300mhz typical detector characteristics, 1000mhz v out output voltage vs v cc supply voltage (rf input signal off) i cc power supply current vs v cc supply voltage (rf input signal off) supply voltage (v) 2.5 135 130 125 120 115 5.0 5531 g01 4.5 3.5 5.5 4.0 3.0 6.0 v out output voltage (mv) v os = 0v t a = 85 c t a = 25 c t a = C40 c supply voltage (v) 2.5 520 500 480 460 440 420 5.0 5531 g02 4.5 3.5 5.5 4.0 3.0 6.0 supply current ( a) t a = 85 c t a = 25 c t a = C40 c v os = 0v v out output voltage (mv) 3600 3200 2800 2400 2000 1600 1200 800 400 0 rf input power (dbm) 553 1 g03 C32 C28 C24 C20 C16 C12 C8 C4 0 4 8 v cc = 3.6v t a = 25 c v os = 1v v os = 0.5v v os = 0.2v v os = 0v v out output voltage (mv) 3600 3200 2800 2400 2000 1600 1200 800 400 0 rf input power (dbm) 553 1 g04 C32 C28 C24 C20 C16 C12 C8 C4 0 4 8 v os = 1v v os = 0.5v v os = 0.2v v os = 0v v cc = 3.6v t a = 25 c v out output voltage (mv) 5600 4800 4000 3200 2400 1600 800 0 rf input power (dbm) 553 1 g05 C32 C28 C24 C20 C16 C12 C8 C4 0 4 12 8 v os = 0v t a = 25 c v cc = 3v v cc = 4v v cc = 5v v cc = 6v v out output voltage (mv) 3600 3200 2800 2400 2000 1600 1200 800 400 0 rf input power (dbm) 553 1 g06 C32 C28 C24 C20 C16 C12 C8 C4 0 4 8 v os = 0v v cc = 3.6v t a = C40 c t a = 85 c t a = 25 c v out output voltage (mv) 3600 3200 2800 2400 2000 1600 1200 800 400 0 rf input power (dbm) 553 1 g07 C32 C28 C24 C20 C16 C12 C8 C4 0 4 8 t a = C40 c t a = 85 c v os = 0v v cc = 3.6v t a = 25 c
LTC5531 4 5531f typical perfor a ce characteristics uw typical detector characteristics, 4000mhz typical detector characteristics, 5000mhz typical detector characteristics, 6000mhz typical detector characteristics, 7000mhz v out slope vs rf input power at 300mhz typical detector characteristics, 2000mhz typical detector characteristics, 3000mhz v out output voltage (mv) 3600 3200 2800 2400 2000 1600 1200 800 400 0 rf input power (dbm) 553 1 g07 C32 C28 C24 C20 C16 C12 C8 C4 0 4 8 t a = C40 c t a = 85 c v os = 0v v cc = 3.6v t a = 25 c v out output voltage (mv) 3600 3200 2800 2400 2000 1600 1200 800 400 0 rf input power (dbm) 553 1 g09 C30 C26 C22 C18 C14 C10 C6 C2 2 6 10 t a = C40 c t a = 85 c v os = 0v v cc = 3.6v t a = 25 c v out output voltage (mv) 3600 3200 2800 2400 2000 1600 1200 800 400 0 rf input power (dbm) 553 1 g10 C30 C26 C22 C18 C14 C10 C6 C2 2 6 10 t a = C40 c t a = 85 c v os = 0v v cc = 3.6v t a = 25 c v out output voltage (mv) 3600 3200 2800 2400 2000 1600 1200 800 400 0 rf input power (dbm) 553 1 g11 C30 C26 C22 C18 C14 C10 C6 C2 2 6 10 t a = C40 c t a = 85 c v os = 0v v cc = 3.6v t a = 25 c v out output voltage (mv) 3600 3200 2800 2400 2000 1600 1200 800 400 0 rf input power (dbm) 553 1 g12 C30 C26 C22 C18 C14 C10 C6 C2 2 6 10 t a = C40 c t a = 85 c v os = 0v v cc = 3.6v t a = 25 c v out output voltage (mv) 3600 3200 2800 2400 2000 1600 1200 800 400 0 rf input power (dbm) 553 1 g13 C30 C26 C22 C18 C14 C10 C6 C2 2 6 10 t a = C40 c t a = 85 c v os = 0v v cc = 3.6v t a = 25 c rf input power (dbm) C30 v out slope (mv/db) 1000 100 10 1 C25 5 5531 g14 C20 C15 C10 0 C5 t a = C40 c t a = 85 c t a = 25 c
LTC5531 5 5531f typical perfor a ce characteristics uw v out slope vs rf input power at 3000mhz v out slope vs rf input power at 4000mhz v out slope vs rf input power at 5000mhz v out slope vs rf input power at 6000mhz v out slope vs rf input power at 7000mhz v out slope vs rf input power at 1000mhz v out slope vs rf input power at 2000mhz rf input power (dbm) C30 v out slope (mv/db) 1000 100 10 1 C25 5 5531 g15 C20 C15 C10 0 C5 t a = C40 c t a = 85 c t a = 25 c v os = 0v v cc = 3.6v rf input power (dbm) C30 v out slope (mv/db) 1000 100 10 1 C25 5 5531 g16 C20 C15 C10 0 C5 t a = C40 c t a = 85 c t a = 25 c v os = 0v v cc = 3.6v rf input power (dbm) C30 v out slope (mv/db) 1000 100 10 1 C25 5 5531 g17 C20 C15 C10 0 C5 t a = C40 c t a = 85 c t a = 25 c v os = 0v v cc = 3.6v rf input power (dbm) C30 v out slope (mv/db) 1000 100 10 1 C25 5 5531 g18 C20 C15 C10 0 C5 t a = C40 c t a = 85 c t a = 25 c v os = 0v v cc = 3.6v rf input power (dbm) C30 v out slope (mv/db) 1000 100 10 1 C25 5 5531 g19 C20 C15 C10 0 C5 t a = C40 c t a = 85 c t a = 25 c v os = 0v v cc = 3.6v rf input power (dbm) C30 v out slope (mv/db) 1000 100 10 1 C25 5 5531 g20 C20 C15 C10 0 C5 t a = C40 c t a = 85 c t a = 25 c v os = 0v v cc = 3.6v rf input power (dbm) C30 v out slope (mv/db) 1000 100 10 1 C25 5 5531 g21 C20 C15 C10 0 C5 t a = C40 c t a = 85 c t a = 25 c v os = 0v v cc = 3.6v
LTC5531 6 5531f typical perfor a ce characteristics uw 0.3000ghz-7.000ghz rf in input impedance (pin = 0dbm, v cc = 3.6v, t a = 25 c) frequency resistance reactance (ghz) ( w )( w ) 0.30 290.45 C136.22 0.50 234.41 C162.54 0.70 178.25 C170.53 0.90 137.31 C159.89 1.10 109.17 C147.57 1.30 86.30 C136.18 1.50 68.65 C121.74 1.70 57.48 C107.60 1.90 49.79 C 96.72 2.10 43.56 C 86.70 2.30 38.67 C77.91 2.50 34.82 C70.13 2.70 31.68 C 62.86 2.90 29.13 C 56.01 3.10 27.17 C 49.83 3.30 25.73 C 44.24 3.50 24.56 C 39.74 3.70 23.18 C 35.35 3.90 22.31 C 30.62 4.10 20.73 C26.88 4.30 19.88 C22.31 4.50 19.40 C18.23 4.70 19.05 C14.25 4.90 19.08 C10.21 5.10 19.55 C 6.30 5.30 20.85 C 2.84 5.50 21.94 C1.49 5.70 20.60 C 0.07 5.90 19.29 2.99 6.10 18.69 6.61 6.30 18.53 10.39 6.50 18.74 14.35 6.70 19.79 17.91 6.90 19.75 20.77 7.00 19.99 22.47 5508 ta03 s11 forward reflection impedance
LTC5531 7 5531f s11 forward reflection impedance 0.3000ghz-7.000ghz rf in input impedance (pin = C25dbm, v cc = 3.6v, t a = 25 c) frequency resistance reactance (ghz) ( w )( w ) 0.30 216.45 C76.47 0.50 190.63 C98.28 0.70 161.98 C112.03 0.90 133.17 C111.53 1.10 113.08 C109.05 1.30 94.55 C107.08 1.50 75.33 C 98.50 1.70 63.52 C 88.19 1.90 55.19 C 80.05 2.10 48.64 C72.23 2.30 43.73 C 64.81 2.50 39.71 C 58.31 2.70 36.47 C 52.27 2.90 33.69 C 46.77 3.10 31.61 C 41.25 3.30 29.78 C36.61 3.50 28.27 C32.39 3.70 26.63 C28.12 3.90 26.12 C23.97 4.10 24.20 C20.75 4.30 23.28 C16.69 4.50 22.60 C12.77 4.70 22.21 C 9.08 4.90 22.15 C5.24 5.10 22.61 C1.58 5.30 23.90 1.53 5.50 24.97 2.62 5.70 23.51 4.00 5.90 22.25 6.94 6.10 21.57 10.62 6.30 21.43 14.02 6.50 21.69 17.77 6.70 22.68 21.24 6.90 22.81 24.21 7.00 23.07 25.56 5508 ta04 typical perfor a ce characteristics uw
LTC5531 8 5531f block diagra w uu u pi fu ctio s rf in (pin 1): rf input voltage. referenced to v cc . a coupling capacitor must be used to connect to the rf signal source. the frequency range is 300mhz to 7ghz. this pin has an internal 500 w termination, an internal schottky diode detector and a peak detector capacitor. gnd (pin 2): ground. shdn (pin 3): shutdown input. a logic low on the shdn pin places the part in shutdown mode. a logic high enables the part. shdn has an internal 160k pulldown resistor to ensure that the part is in shutdown when no input is applied. in shutdown v out is connected to ground via a 280 w resistor. v os (pin 4): v out offset voltage adjustment. this pin adjusts the starting v out voltage when no rf signal is present. for v os from 0v to 120mv, v out is unaffected by v os . for v os > 120mv, v out is the sum of v os plus the detected rf signal. v out (pin 5): detector output. v cc (pin 6): power supply voltage, 2.7v to 6v. v cc should be bypassed appropriately with ceramic capacitors. C + C + 5531 bd 25pf v out gnd 2 5 v os 6 buffer 500 500 rf det 50 a50 a 80k bias rf source rf in v cc 1 31k 24k 30k 30k C + + 120mv 80k shutdown sd sd sd shdn 160k 180 100 3 4
LTC5531 9 5531f applicatio s i for atio wu u u operation the LTC5531 rf detector integrates several functions to provide rf power detection over frequencies ranging from 300mhz to 7ghz. these functions include an internal fre- quency compensated buffer amplifier, an rf schottky di- ode peak detector and level shift amplifier to convert the rf input signal to dc and a delay circuit to avoid voltage tran- sients at v out when powering up. the LTC5531 has both shutdown and voltage offset adjustment capabilities. buffer amplifier the output buffer amplifier is capable of supplying typi- cally 4ma into a load. the amplifier has a bandwidth of 2mhz and a fixed internal gain of two. the v os input controls the dc input voltage to the buffer amplifier. v os must be connected to ground if the dc output voltage is not to be changed. the buffer is initially trimmed to approximately 120mv with v os connected to ground. the v os pin is used to change the initial v out starting voltage. this function enables the LTC5531 output to span the input range of a variety of analog-to-digital converters. v out will not change until v os exceeds 120mv. the voltage at v out for v os 3 120mv and with no rf signal present is: v out = v os v out will exactly track v os above 120mv. rf detector the internal rf schottky diode peak detector and level shift amplifier converts the rf input signal to a low frequency signal. the detector demonstrates excellent efficiency and linearity over a wide range of input power. the schottky diode is biased at about 55 m a and drives a 25pf internal peak detector capacitor. shutdown the part is in shutdown mode when shdn is low. the supply current is reduced to < 2 m a and v out is shorted to ground via a 280 w resistor. when shdn is asserted high, the part is enabled after about 8 m s. rf in gnd shdn v cc v out v os LTC5531es6 1 2 3 6 5 4 c4 39pf rf in r1 (opt) c2 100pf c1 0.1 f c3 (opt) v cc 2.7v to 6v v out 5531 db v os shdn v cc 22k demo board schematic
LTC5531 10 5531f rf in gnd shdn v cc v out v os LTC5531es6 1 2 3 6 5 4 0.1 f 5532 f01 li-ion cell band pcs band vpc mobile phone dsp offset adjustment diplexer tx pa module r1 200 1% c1 0.5pf 0.05pf bse enable disable applicatio s i for atio wu uu figure 1. mobile phone tx power control application with a capacitive tap applications the LTC5531 can be used as a self-standing signal strength measuring receiver for a wide range of input signals from C32dbm to 10dbm for frequencies from 300mhz to 7ghz. operation at higher frequencies is achievable. consult factory for more information. the LTC5531 can be used as a demodulator for am and ask modulated signals with data rates up to 2mhz. depending on specific application needs, the rssi output can be split between two branches, providing ac-coupled data (or audio) output and dc-coupled rssi output for signal strength measurements and agc. the LTC5531 can be used for rf power detection and control. figure 1 is an example of transmitter power control, using the LTC5531 with a capacitive tap to the power amplifier. a 0.5pf capacitor (c1) followed by a 200 w resistor (r1) forms a coupling circuit with about 20db loss at 900mhz referenced to the LTC5531 rf input pin. in the actual product implementation, component values for the capacitive tap may be different depending on parts placement, pcb parasitics and parameters of the antenna.
LTC5531 11 5531f package descriptio u s6 package 6-lead plastic tsot-23 (reference ltc dwg # 05-08-1636) 1.50 ?1.75 (note 4) 2.80 bsc 0.30 ?0.45 6 plcs (note 3) datum ? 0.09 ?0.20 (note 3) s6 tsot-23 0302 2.90 bsc (note 4) 0.95 bsc 1.90 bsc 0.80 ?0.90 1.00 max 0.01 ?0.10 0.20 bsc 0.30 ?0.50 ref pin one id note: 1. dimensions are in millimeters 2. drawing not to scale 3. dimensions are inclusive of plating 4. dimensions are exclusive of mold flash and metal burr 5. mold flash shall not exceed 0.254mm 6. jedec package reference is mo-193 3.85 max 0.62 max 0.95 ref recommended solder pad layout per ipc calculator 1.4 min 2.62 ref 1.22 ref information furnished by linear technology corporation is believed to be accurate and reliable. however, no responsibility is assumed for its use. linear technology corporation makes no represen- tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
LTC5531 12 5531f lt/tp 0104 1k ? printed in usa linear technology corporation 1630 mccarthy blvd., milpitas, ca 95035-7417 (408) 432-1900 l fax: (408) 434-0507 l www.linear.com ? linear technology corporation 2004 related parts part number description comments infrastructure lt5511 high linearity upconverting mixer rf output to 3ghz, 17dbm iip3, integrated lo buffer lt5512 dc-3ghz high signal level downconverting mixer dc to 3ghz, 21dbm iip3, integrated lo buffer lt5515 1.5ghz to 2.5ghz direct conversion quadrature demodulator 20dbm iip3, integrated lo quadrature generator lt5516 0.8ghz to 1.5ghz direct conversion quadrature demodulator 21.5dbm iip3, integrated lo quadrature generator lt5517 40mhz to 900mhz direct conversion quadrature demodulator 21dbm iip3, integrated lo quadrature generator lt5519 0.7ghz to 1.4ghz high linearity upconverting mixer 17.1dbm iip3, 50 w single ended rf and lo ports lt5520 1.3ghz to 2.3ghz high linearity upconverting mixer 15.9dbm iip3, 50 w single ended rf and lo ports lt5522 600mhz to 2.7ghz high linearity downconverting mixer 4.5v to 5.25v supply, 25dbm iip3 at 900mhz, nf = 12.5db, 50 w single-ended rf and lo ports rf power detectors lt5504 800mhz to 2.7ghz rf measuring receiver 80db dynamic range, temperature compensated, 2.7v to 5.25v supply ltc ? 5505 300mhz to 3ghz rf power detectors ltc5505-1: C28dbm to 18dbm range, ltc5505-2: C32dbm to 12dbm range, temperature compensated, 2.7v to 6v supply ltc5507 100khz to 1000mhz rf power detector C34dbm to 14dbm range, temperature compensated, 2.7v to 6v supply ltc5508 300mhz to 7ghz rf power detector C32dbm to 12dbm range, temperature compensated, sc70 package ltc5509 300mhz to 3ghz rf power detector 36db dynamic range, temperature compensated, sc70 package ltc5532 300mhz to 7ghz precision rf power detector precision v out offset control, adjustable gain and offset rf building blocks lt5500 1.8ghz to 2.7ghz receiver front end 1.8v to 5.25v supply, dual-gain lna, mixer, lo buffer lt5502 400mhz quadrature if demodulator with rssi 1.8v to 5.25v supply, 70mhz to 400mhz if, 84db limiting gain, 90db rssi range lt5503 1.2ghz to 2.7ghz direct iq modulator and 1.8v to 5.25v supply, four-step rf power control, upconverting mixer 120mhz modulation bandwidth lt5506 500mhz quadrature if demodulator with vga 1.8v to 5.25v supply, 40mhz to 500mhz if, C4db to 57db linear power gain, 8.8mhz baseband bandwidth lt5546 500mhz ouadrature if demodulator with 17mhz baseband bandwidth, 40mhz to 500mhz if, 1.8v to 5.25v vga and 17mhz baseband bandwidth supply, C7db to 56db linear power gain rf power controllers ltc1757a rf power controller multiband gsm/dcs/gprs mobile phones ltc1758 rf power controller multiband gsm/dcs/gprs mobile phones ltc1957 rf power controller multiband gsm/dcs/gprs mobile phones ltc4400 sot-23 rf pa controller multiband gsm/dcs/gprs phones, 45db dynamic range, 450khz loop bw ltc4401 sot-23 rf pa controller multiband gsm/dcs/gprs phones, 45db dynamic range, 250khz loop bw ltc4403 rf power controller for edge/tdma multiband gsm/gprs/edge mobile phones

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